Erratum: "Transport properties of GaAs[sub 1-x]N[sub x] thin films grown by metalorganic chemical vapor deposition" [Appl. Phys. Lett. 77, 3794 (2000)].

Saved in:
Bibliographic Details
Title: Erratum: "Transport properties of GaAs[sub 1-x]N[sub x] thin films grown by metalorganic chemical vapor deposition" [Appl. Phys. Lett. 77, 3794 (2000)].
Authors: Ahrenkiel, R. K., Johnston, S. W., Keyes, B. M., Friedman, D. J., Vernon, S. M.
Source: Applied Physics Letters; 1/22/2001, Vol. 78 Issue 4, p559, 1p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.1346587