APA (7th ed.) Citation

Kallesøe, C., Mølhave, K., Larsen, K. F., Engstrøm, D., Hansen, T. M., Bøggild, P., . . . Samuelson, L. (2010). Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching. Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics, 28(1), 21. https://doi.org/10.1116/1.3268135

Chicago Style (17th ed.) Citation

Kallesøe, Christian, Kristian Mølhave, Kasper F. Larsen, Daniel Engstrøm, Torben M. Hansen, Peter Bøggild, Thomas Mårtensson, Magnus Borgström, and Lars Samuelson. "Integration, Gap Formation, and Sharpening of III-V Heterostructure Nanowires by Selective Etching." Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics 28, no. 1 (2010): 21. https://doi.org/10.1116/1.3268135.

MLA (9th ed.) Citation

Kallesøe, Christian, et al. "Integration, Gap Formation, and Sharpening of III-V Heterostructure Nanowires by Selective Etching." Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics, vol. 28, no. 1, 2010, p. 21, https://doi.org/10.1116/1.3268135.