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Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching.

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Bibliographic Details
Title: Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching.
Authors: Kallesøe, Christian1, christian.kallesoe@nanotech.dtu.dk, Mølhave, Kristian1, Larsen, Kasper F.1, Engstrøm, Daniel1, Hansen, Torben M.1, Bøggild, Peter1, Mårtensson, Thomas2, Borgström, Magnus2, Samuelson, Lars2
Source: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan2010, Vol. 28 Issue 1, p21-26, 6p, 7 Diagrams, 1 Chart, 1 Graph
Database: Applied Science & Technology Source
Description
ISSN:21662746
DOI:10.1116/1.3268135