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Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching.

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Title: Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching.
Authors: Kallesøe, Christian1, christian.kallesoe@nanotech.dtu.dk, Mølhave, Kristian1, Larsen, Kasper F.1, Engstrøm, Daniel1, Hansen, Torben M.1, Bøggild, Peter1, Mårtensson, Thomas2, Borgström, Magnus2, Samuelson, Lars2
Source: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan2010, Vol. 28 Issue 1, p21-26, 6p, 7 Diagrams, 1 Chart, 1 Graph
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 48539717
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+B-Nanotechnology+%26+Microelectronics%22">Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics</searchLink>; Jan2010, Vol. 28 Issue 1, p21-26, 6p, 7 Diagrams, 1 Chart, 1 Graph
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=48539717
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        Value: 10.1116/1.3268135
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      – Code: eng
        Text: English
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        PageCount: 6
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              Text: Jan2010
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              Y: 2010
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            – TitleFull: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics
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