APA (7th ed.) Citation

Lush, G. B., MacMillan, H. F., & Keyes, B. M. (1992). A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 72, 1436. https://doi.org/10.1063/1.351704

Chicago Style (17th ed.) Citation

Lush, G. B., H. F. MacMillan, and B. M. Keyes. "A Study of Minority Carrier Lifetime Versus Doping Concentration in N-type GaAs Grown by Metalorganic Chemical Vapor Deposition." Journal of Applied Physics 72 (1992): 1436. https://doi.org/10.1063/1.351704.

MLA (9th ed.) Citation

Lush, G. B., et al. "A Study of Minority Carrier Lifetime Versus Doping Concentration in N-type GaAs Grown by Metalorganic Chemical Vapor Deposition." Journal of Applied Physics, vol. 72, 1992, p. 1436, https://doi.org/10.1063/1.351704.