A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition.
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| Title: | A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition. |
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| Authors: | Lush, G. B., MacMillan, H. F., Keyes, B. M. |
| Source: | Journal of Applied Physics; August 15 1992, Vol. 72, p1436-1442, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.351704 |
