Electronically active defects in cw beam-annealed Si. Electron-beam-induced current.
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| Title: | Electronically active defects in cw beam-annealed Si. Electron-beam-induced current. |
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| Authors: | Sheng, N. H., Mizuta, M., Merz, J. L. |
| Source: | Journal of Applied Physics; April 15 1984, Vol. 55, p3072-3091, 20p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.333303 |
