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Electronically active defects in cw beam-annealed Si. Electron-beam-induced current.

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Bibliographic Details
Title: Electronically active defects in cw beam-annealed Si. Electron-beam-induced current.
Authors: Sheng, N. H., Mizuta, M., Merz, J. L.
Source: Journal of Applied Physics; April 15 1984, Vol. 55, p3072-3091, 20p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500078593
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Electronically active defects in cw beam-annealed Si. Electron-beam-induced current.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; April 15 1984, Vol. 55, p3072-3091, 20p
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.333303
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 20
        StartPage: 3072
    Titles:
      – TitleFull: Electronically active defects in cw beam-annealed Si. Electron-beam-induced current.
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          Name:
            NameFull: Sheng, N. H.
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            NameFull: Mizuta, M.
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            NameFull: Merz, J. L.
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            – D: 15
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              Text: April 15 1984
              Type: published
              Y: 1984
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              Value: 55
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            – TitleFull: Journal of Applied Physics
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