APA (7th ed.) Citation

Lai, S. T., Nener, B. D., & Faraone, L. (1993). Characterization of deep-level defects in GaAs irradiated by 1 MeV electrons. Journal of Applied Physics, 73, 640. https://doi.org/10.1063/1.353375

Chicago Style (17th ed.) Citation

Lai, S. T., B. D. Nener, and L. Faraone. "Characterization of Deep-level Defects in GaAs Irradiated by 1 MeV Electrons." Journal of Applied Physics 73 (1993): 640. https://doi.org/10.1063/1.353375.

MLA (9th ed.) Citation

Lai, S. T., et al. "Characterization of Deep-level Defects in GaAs Irradiated by 1 MeV Electrons." Journal of Applied Physics, vol. 73, 1993, p. 640, https://doi.org/10.1063/1.353375.