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Radiative transitions in quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxy.

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Title: Radiative transitions in quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxy.
Authors: Rinaldi, R., Cingolani, R., Ferrara, M.
Source: Journal of Applied Physics; January 15 1993, Vol. 73, p898-904, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500084209
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Radiative transitions in quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxy.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; January 15 1993, Vol. 73, p898-904, 7p
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        Value: 10.1063/1.353302
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 898
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      – TitleFull: Radiative transitions in quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxy.
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            NameFull: Rinaldi, R.
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            NameFull: Cingolani, R.
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              Text: January 15 1993
              Type: published
              Y: 1993
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              Value: 73
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