Demonstration of excitation-dependent grain-boundary recombination velocity in polycrystalline silicon.

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Bibliographic Details
Title: Demonstration of excitation-dependent grain-boundary recombination velocity in polycrystalline silicon.
Authors: Sundaresan, R., Fossum, J. G., Burk, D. E.
Source: Journal of Applied Physics; August 15 1984, Vol. 56, p964-970, 7p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.334036