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Demonstration of excitation-dependent grain-boundary recombination velocity in polycrystalline silicon.

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Bibliographic Details
Title: Demonstration of excitation-dependent grain-boundary recombination velocity in polycrystalline silicon.
Authors: Sundaresan, R., Fossum, J. G., Burk, D. E.
Source: Journal of Applied Physics; August 15 1984, Vol. 56, p964-970, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500115928
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Demonstration of excitation-dependent grain-boundary recombination velocity in polycrystalline silicon.
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  Data: <searchLink fieldCode="AU" term="%22Sundaresan%2C+R%2E%22">Sundaresan, R.</searchLink><br /><searchLink fieldCode="AU" term="%22Fossum%2C+J%2E+G%2E%22">Fossum, J. G.</searchLink><br /><searchLink fieldCode="AU" term="%22Burk%2C+D%2E+E%2E%22">Burk, D. E.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; August 15 1984, Vol. 56, p964-970, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500115928
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      – Type: doi
        Value: 10.1063/1.334036
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 7
        StartPage: 964
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      – TitleFull: Demonstration of excitation-dependent grain-boundary recombination velocity in polycrystalline silicon.
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            NameFull: Sundaresan, R.
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            NameFull: Fossum, J. G.
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            NameFull: Burk, D. E.
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            – D: 15
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              Text: August 15 1984
              Type: published
              Y: 1984
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              Value: 56
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            – TitleFull: Journal of Applied Physics
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