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Defects in molecular beam epitaxial GaAs grown at low temperatures.

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Title: Defects in molecular beam epitaxial GaAs grown at low temperatures.
Authors: Hozhabri, N., Sharma, S. C., Pathak, R. N.
Source: Journal of Electronic Materials; June 1994, Vol. 23, p519-523, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500148727
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Defects in molecular beam epitaxial GaAs grown at low temperatures.
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  Data: <searchLink fieldCode="AU" term="%22Hozhabri%2C+N%2E%22">Hozhabri, N.</searchLink><br /><searchLink fieldCode="AU" term="%22Sharma%2C+S%2E+C%2E%22">Sharma, S. C.</searchLink><br /><searchLink fieldCode="AU" term="%22Pathak%2C+R%2E+N%2E%22">Pathak, R. N.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; June 1994, Vol. 23, p519-523, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500148727
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        Value: 10.1007/BF02670654
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 519
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      – TitleFull: Defects in molecular beam epitaxial GaAs grown at low temperatures.
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            NameFull: Hozhabri, N.
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            NameFull: Sharma, S. C.
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            NameFull: Pathak, R. N.
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              Text: June 1994
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              Y: 1994
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              Value: 23
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