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Very low resistance non-alloyed and in situ ohmic contacts to n-GaAs using δ-doped surface layers.

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Bibliographic Details
Title: Very low resistance non-alloyed and in situ ohmic contacts to n-GaAs using δ-doped surface layers.
Authors: Missous, M., Taskin, T.
Source: Semiconductor Science & Technology; October 1993, Vol. 8, p1848-1853, 6p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 500170248
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Very low resistance non-alloyed and in situ ohmic contacts to n-GaAs using δ-doped surface layers.
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; October 1993, Vol. 8, p1848-1853, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500170248
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1088/0268-1242/8/10/010
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 1848
    Titles:
      – TitleFull: Very low resistance non-alloyed and in situ ohmic contacts to n-GaAs using δ-doped surface layers.
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          Name:
            NameFull: Missous, M.
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            NameFull: Taskin, T.
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              Text: October 1993
              Type: published
              Y: 1993
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              Value: 02681242
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              Value: 8
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            – TitleFull: Semiconductor Science & Technology
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