Effect of ion energy on Sn donor activation and defect production in molecular beam epitaxy GaAs doped with Sn ions during growth.
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| Title: | Effect of ion energy on Sn donor activation and defect production in molecular beam epitaxy GaAs doped with Sn ions during growth. |
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| Authors: | Thompson, J. H., Jones, G. A. C., Ritchie, D. A. |
| Source: | Journal of Applied Physics; October 1 1993, Vol. 74, p4375-4381, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.354405 |
