APA (7th ed.) Citation

Talwar, D. N., Manasreh, M. O., & Stutz, C. E. (1993). Infrared studies of Be-doped GaAs grown by molecular beam epitaxy at low temperatures. Journal of Electronic Materials, 22, 1445. https://doi.org/10.1007/BF02649996

Chicago Style (17th ed.) Citation

Talwar, D. N., M. O. Manasreh, and C. E. Stutz. "Infrared Studies of Be-doped GaAs Grown by Molecular Beam Epitaxy at Low Temperatures." Journal of Electronic Materials 22 (1993): 1445. https://doi.org/10.1007/BF02649996.

MLA (9th ed.) Citation

Talwar, D. N., et al. "Infrared Studies of Be-doped GaAs Grown by Molecular Beam Epitaxy at Low Temperatures." Journal of Electronic Materials, vol. 22, 1993, p. 1445, https://doi.org/10.1007/BF02649996.