Infrared studies of Be-doped GaAs grown by molecular beam epitaxy at low temperatures.
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| Title: | Infrared studies of Be-doped GaAs grown by molecular beam epitaxy at low temperatures. |
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| Authors: | Talwar, D. N., Manasreh, M. O., Stutz, C. E. |
| Source: | Journal of Electronic Materials; December 1993, Vol. 22, p1445-1448, 4p |
| Database: | Applied Science & Technology Source |
| ISSN: | 03615235 |
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| DOI: | 10.1007/BF02649996 |
