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Infrared studies of Be-doped GaAs grown by molecular beam epitaxy at low temperatures.

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Bibliographic Details
Title: Infrared studies of Be-doped GaAs grown by molecular beam epitaxy at low temperatures.
Authors: Talwar, D. N., Manasreh, M. O., Stutz, C. E.
Source: Journal of Electronic Materials; December 1993, Vol. 22, p1445-1448, 4p
Database: Applied Science & Technology Source
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