Lin, B. S. M., & Hwang, J. (1994). Two-dimensional quantum model on photoyield of the p+-SiGe/p-Si heterojunction internal photoemission infrared detector. Journal of Applied Physics, 75, 388. https://doi.org/10.1063/1.355864
Chicago Style (17th ed.) CitationLin, Benjamin S. M., and J. Hwang. "Two-dimensional Quantum Model on Photoyield of the P+-SiGe/p-Si Heterojunction Internal Photoemission Infrared Detector." Journal of Applied Physics 75 (1994): 388. https://doi.org/10.1063/1.355864.
MLA (9th ed.) CitationLin, Benjamin S. M., and J. Hwang. "Two-dimensional Quantum Model on Photoyield of the P+-SiGe/p-Si Heterojunction Internal Photoemission Infrared Detector." Journal of Applied Physics, vol. 75, 1994, p. 388, https://doi.org/10.1063/1.355864.