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Two-dimensional quantum model on photoyield of the p+-SiGe/p-Si heterojunction internal photoemission infrared detector.

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Bibliographic Details
Title: Two-dimensional quantum model on photoyield of the p+-SiGe/p-Si heterojunction internal photoemission infrared detector.
Authors: Lin, Benjamin S. M., Hwang, J.
Source: Journal of Applied Physics; January 1 1994, Vol. 75, p388-392, 5p
Database: Applied Science & Technology Source
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PubType: Academic Journal
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        Value: 10.1063/1.355864
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 388
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      – TitleFull: Two-dimensional quantum model on photoyield of the p+-SiGe/p-Si heterojunction internal photoemission infrared detector.
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            NameFull: Lin, Benjamin S. M.
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              Text: January 1 1994
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              Y: 1994
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              Value: 75
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