Two-dimensional quantum model on photoyield of the p+-SiGe/p-Si heterojunction internal photoemission infrared detector.

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Bibliographic Details
Title: Two-dimensional quantum model on photoyield of the p+-SiGe/p-Si heterojunction internal photoemission infrared detector.
Authors: Lin, Benjamin S. M., Hwang, J.
Source: Journal of Applied Physics; January 1 1994, Vol. 75, p388-392, 5p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.355864