APA (7th ed.) Citation

Chang, S., Lee, S., & Chen, C. R. (1994). Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy. Journal of Applied Physics, 75, 1511. https://doi.org/10.1063/1.356386

Chicago Style (17th ed.) Citation

Chang, Shou-Zen, Si-Chen Lee, and C. R. Chen. "Dislocation Generation Mechanisms of InxGa1-xAs (0≤x≤1) Epilayers Grown on (100) InP Substrates by Molecular Beam Epitaxy." Journal of Applied Physics 75 (1994): 1511. https://doi.org/10.1063/1.356386.

MLA (9th ed.) Citation

Chang, Shou-Zen, et al. "Dislocation Generation Mechanisms of InxGa1-xAs (0≤x≤1) Epilayers Grown on (100) InP Substrates by Molecular Beam Epitaxy." Journal of Applied Physics, vol. 75, 1994, p. 1511, https://doi.org/10.1063/1.356386.