Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy.
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| Title: | Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy. |
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| Authors: | Chang, Shou-Zen, Lee, Si-Chen, Chen, C. R. |
| Source: | Journal of Applied Physics; February 1 1994, Vol. 75, p1511-1516, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.356386 |
