View in EDS

Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy.

Saved in:
Bibliographic Details
Title: Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy.
Authors: Chang, Shou-Zen, Lee, Si-Chen, Chen, C. R.
Source: Journal of Applied Physics; February 1 1994, Vol. 75, p1511-1516, 6p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500220461
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Chang%2C+Shou-Zen%22">Chang, Shou-Zen</searchLink><br /><searchLink fieldCode="AU" term="%22Lee%2C+Si-Chen%22">Lee, Si-Chen</searchLink><br /><searchLink fieldCode="AU" term="%22Chen%2C+C%2E+R%2E%22">Chen, C. R.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; February 1 1994, Vol. 75, p1511-1516, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500220461
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.356386
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 1511
    Titles:
      – TitleFull: Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Chang, Shou-Zen
      – PersonEntity:
          Name:
            NameFull: Lee, Si-Chen
      – PersonEntity:
          Name:
            NameFull: Chen, C. R.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 02
              Text: February 1 1994
              Type: published
              Y: 1994
          Identifiers:
            – Type: issn-print
              Value: 00218979
          Numbering:
            – Type: volume
              Value: 75
          Titles:
            – TitleFull: Journal of Applied Physics
              Type: main
ResultId 1