Capacitance of resonant tunneling diodes with spacer layers.

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Bibliographic Details
Title: Capacitance of resonant tunneling diodes with spacer layers.
Authors: Wei, T., Stapleton, S.
Source: Solid-State Electronics; February 1995, Vol. 38, p465-469, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500239615
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Capacitance of resonant tunneling diodes with spacer layers.
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  Data: <searchLink fieldCode="AU" term="%22Wei%2C+T%2E%22">Wei, T.</searchLink><br /><searchLink fieldCode="AU" term="%22Stapleton%2C+S%2E%22">Stapleton, S.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; February 1995, Vol. 38, p465-469, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500239615
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/0038-1101(94)00119-Z
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 465
    Titles:
      – TitleFull: Capacitance of resonant tunneling diodes with spacer layers.
        Type: main
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      – PersonEntity:
          Name:
            NameFull: Wei, T.
      – PersonEntity:
          Name:
            NameFull: Stapleton, S.
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          Dates:
            – D: 01
              M: 02
              Text: February 1995
              Type: published
              Y: 1995
          Identifiers:
            – Type: issn-print
              Value: 00381101
          Numbering:
            – Type: volume
              Value: 38
          Titles:
            – TitleFull: Solid-State Electronics
              Type: main
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