Capacitance and hysteresis study of AlAs/GaAs resonant tunneling diode with asymmetric spacer layers.

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Bibliographic Details
Title: Capacitance and hysteresis study of AlAs/GaAs resonant tunneling diode with asymmetric spacer layers.
Authors: Wei, T., Stapleton, S., Berolo, O.
Source: Journal of Applied Physics; April 15 1995, Vol. 77, p4071-4076, 6p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.359490