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Capacitance and hysteresis study of AlAs/GaAs resonant tunneling diode with asymmetric spacer layers.

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Title: Capacitance and hysteresis study of AlAs/GaAs resonant tunneling diode with asymmetric spacer layers.
Authors: Wei, T., Stapleton, S., Berolo, O.
Source: Journal of Applied Physics; April 15 1995, Vol. 77, p4071-4076, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500269007
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Capacitance and hysteresis study of AlAs/GaAs resonant tunneling diode with asymmetric spacer layers.
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  Data: <searchLink fieldCode="AU" term="%22Wei%2C+T%2E%22">Wei, T.</searchLink><br /><searchLink fieldCode="AU" term="%22Stapleton%2C+S%2E%22">Stapleton, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Berolo%2C+O%2E%22">Berolo, O.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; April 15 1995, Vol. 77, p4071-4076, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500269007
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.359490
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 4071
    Titles:
      – TitleFull: Capacitance and hysteresis study of AlAs/GaAs resonant tunneling diode with asymmetric spacer layers.
        Type: main
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          Name:
            NameFull: Wei, T.
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            NameFull: Stapleton, S.
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            NameFull: Berolo, O.
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            – D: 15
              M: 04
              Text: April 15 1995
              Type: published
              Y: 1995
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              Value: 00218979
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              Value: 77
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            – TitleFull: Journal of Applied Physics
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