(111)B-oriented AlAs/GaAs/AlAs double barrier resonant tunneling devices grown in a gas source molecular beam epitaxy system.
Saved in:
| Title: | (111)B-oriented AlAs/GaAs/AlAs double barrier resonant tunneling devices grown in a gas source molecular beam epitaxy system. |
|---|---|
| Authors: | Cong, L., Williamson, F., Nathan, M. I. |
| Source: | Journal of Electronic Materials; February 1996, Vol. 25, p305-308, 4p |
| Database: | Applied Science & Technology Source |
| ISSN: | 03615235 |
|---|---|
| DOI: | 10.1007/BF02666261 |
