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(111)B-oriented AlAs/GaAs/AlAs double barrier resonant tunneling devices grown in a gas source molecular beam epitaxy system.

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Bibliographic Details
Title: (111)B-oriented AlAs/GaAs/AlAs double barrier resonant tunneling devices grown in a gas source molecular beam epitaxy system.
Authors: Cong, L., Williamson, F., Nathan, M. I.
Source: Journal of Electronic Materials; February 1996, Vol. 25, p305-308, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500273219
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: (111)B-oriented AlAs/GaAs/AlAs double barrier resonant tunneling devices grown in a gas source molecular beam epitaxy system.
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  Data: <searchLink fieldCode="AU" term="%22Cong%2C+L%2E%22">Cong, L.</searchLink><br /><searchLink fieldCode="AU" term="%22Williamson%2C+F%2E%22">Williamson, F.</searchLink><br /><searchLink fieldCode="AU" term="%22Nathan%2C+M%2E+I%2E%22">Nathan, M. I.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; February 1996, Vol. 25, p305-308, 4p
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      – Type: doi
        Value: 10.1007/BF02666261
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 305
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      – TitleFull: (111)B-oriented AlAs/GaAs/AlAs double barrier resonant tunneling devices grown in a gas source molecular beam epitaxy system.
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            NameFull: Cong, L.
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            NameFull: Williamson, F.
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            NameFull: Nathan, M. I.
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            – D: 01
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              Text: February 1996
              Type: published
              Y: 1996
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              Value: 25
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