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Ar+ bombardment of Si(100) in oxygen atmosphere: room temperature oxide formation studied by x-ray photoelectron spectroscopy.

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Bibliographic Details
Title: Ar+ bombardment of Si(100) in oxygen atmosphere: room temperature oxide formation studied by x-ray photoelectron spectroscopy.
Authors: Terrasi, A., Coluzza, C., Margaritondo, G.
Source: Journal of Applied Physics; September 15 1995, Vol. 78, p3820-3823, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500330148
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Ar+ bombardment of Si(100) in oxygen atmosphere: room temperature oxide formation studied by x-ray photoelectron spectroscopy.
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  Data: <searchLink fieldCode="AU" term="%22Terrasi%2C+A%2E%22">Terrasi, A.</searchLink><br /><searchLink fieldCode="AU" term="%22Coluzza%2C+C%2E%22">Coluzza, C.</searchLink><br /><searchLink fieldCode="AU" term="%22Margaritondo%2C+G%2E%22">Margaritondo, G.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; September 15 1995, Vol. 78, p3820-3823, 4p
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      – Type: doi
        Value: 10.1063/1.359896
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 3820
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      – TitleFull: Ar+ bombardment of Si(100) in oxygen atmosphere: room temperature oxide formation studied by x-ray photoelectron spectroscopy.
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            NameFull: Terrasi, A.
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            NameFull: Coluzza, C.
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            NameFull: Margaritondo, G.
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            – D: 15
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              Text: September 15 1995
              Type: published
              Y: 1995
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              Value: 78
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            – TitleFull: Journal of Applied Physics
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