APA (7th ed.) Citation

Dryfuse, M. W., & Tabib-Azar, M. (1996). A relationship between interface trap density and transconductance in 6H-SiC enhancement mode field-effect transistors. Solid-State Electronics, 39, 1331. https://doi.org/10.1016/0038-1101(96)00035-4

Chicago Style (17th ed.) Citation

Dryfuse, M. W., and M. Tabib-Azar. "A Relationship Between Interface Trap Density and Transconductance in 6H-SiC Enhancement Mode Field-effect Transistors." Solid-State Electronics 39 (1996): 1331. https://doi.org/10.1016/0038-1101(96)00035-4.

MLA (9th ed.) Citation

Dryfuse, M. W., and M. Tabib-Azar. "A Relationship Between Interface Trap Density and Transconductance in 6H-SiC Enhancement Mode Field-effect Transistors." Solid-State Electronics, vol. 39, 1996, p. 1331, https://doi.org/10.1016/0038-1101(96)00035-4.