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A relationship between interface trap density and transconductance in 6H-SiC enhancement mode field-effect transistors.

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Bibliographic Details
Title: A relationship between interface trap density and transconductance in 6H-SiC enhancement mode field-effect transistors.
Authors: Dryfuse, M. W., Tabib-Azar, M.
Source: Solid-State Electronics; September 1996, Vol. 39, p1331-1335, 5p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 500355484
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: A relationship between interface trap density and transconductance in 6H-SiC enhancement mode field-effect transistors.
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      – Type: doi
        Value: 10.1016/0038-1101(96)00035-4
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 1331
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      – TitleFull: A relationship between interface trap density and transconductance in 6H-SiC enhancement mode field-effect transistors.
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              Text: September 1996
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              Y: 1996
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              Value: 39
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