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A relationship between interface trap density and transconductance in 6H-SiC enhancement mode field-effect transistors.

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Bibliographic Details
Title: A relationship between interface trap density and transconductance in 6H-SiC enhancement mode field-effect transistors.
Authors: Dryfuse, M. W., Tabib-Azar, M.
Source: Solid-State Electronics; September 1996, Vol. 39, p1331-1335, 5p
Database: Applied Science & Technology Source
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