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Characterization of the local structure of amorphous GaAs produced by ion implantation.

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Title: Characterization of the local structure of amorphous GaAs produced by ion implantation.
Authors: Ridgway, M. C., Glover, C. J., Foran, G. J.
Source: Journal of Applied Physics; May 1 1998, Vol. 83 Issue 9, p4610-4614, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500367127
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Characterization of the local structure of amorphous GaAs produced by ion implantation.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; May 1 1998, Vol. 83 Issue 9, p4610-4614, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500367127
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        Value: 10.1063/1.367244
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 4610
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      – TitleFull: Characterization of the local structure of amorphous GaAs produced by ion implantation.
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            NameFull: Ridgway, M. C.
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            NameFull: Glover, C. J.
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            NameFull: Foran, G. J.
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              Text: May 1 1998
              Type: published
              Y: 1998
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