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Field emission properties of diode devices based on amorphic diamond-Si heterojunctions.

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Bibliographic Details
Title: Field emission properties of diode devices based on amorphic diamond-Si heterojunctions.
Authors: Wang, W. N., Fox, N. A., Richardson, D.
Source: Journal of Applied Physics; February 1 1997, Vol. 81, p1505-1508, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500411881
AccessLevel: 2
PubType: Academic Journal
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  Data: Field emission properties of diode devices based on amorphic diamond-Si heterojunctions.
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        Value: 10.1063/1.363915
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 1505
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      – TitleFull: Field emission properties of diode devices based on amorphic diamond-Si heterojunctions.
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            NameFull: Wang, W. N.
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            NameFull: Fox, N. A.
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              Text: February 1 1997
              Type: published
              Y: 1997
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              Value: 81
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