APA (7th ed.) Citation

Treu, M., Burte, E. P., & Schörner, R. (1998). Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide. Journal of Applied Physics, 84(5), 2943. https://doi.org/10.1063/1.368399

Chicago Style (17th ed.) Citation

Treu, M., E. P. Burte, and R. Schörner. "Reliability of Metal-oxide-semiconductor Capacitors on Nitrogen Implanted 4H-silicon Carbide." Journal of Applied Physics 84, no. 5 (1998): 2943. https://doi.org/10.1063/1.368399.

MLA (9th ed.) Citation

Treu, M., et al. "Reliability of Metal-oxide-semiconductor Capacitors on Nitrogen Implanted 4H-silicon Carbide." Journal of Applied Physics, vol. 84, no. 5, 1998, p. 2943, https://doi.org/10.1063/1.368399.