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Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide.

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Bibliographic Details
Title: Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide.
Authors: Treu, M., Burte, E. P., Schörner, R.
Source: Journal of Applied Physics; September 1 1998, Vol. 84 Issue 5, p2943-2948, 6p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 500419408
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide.
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  Data: <searchLink fieldCode="AU" term="%22Treu%2C+M%2E%22">Treu, M.</searchLink><br /><searchLink fieldCode="AU" term="%22Burte%2C+E%2E+P%2E%22">Burte, E. P.</searchLink><br /><searchLink fieldCode="AU" term="%22Schörner%2C+R%2E%22">Schörner, R.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; September 1 1998, Vol. 84 Issue 5, p2943-2948, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500419408
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        Value: 10.1063/1.368399
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 2943
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      – TitleFull: Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide.
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            NameFull: Treu, M.
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            NameFull: Burte, E. P.
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            NameFull: Schörner, R.
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              Text: September 1 1998
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              Y: 1998
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