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Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide.

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Bibliographic Details
Title: Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide.
Authors: Treu, M., Burte, E. P., Schörner, R.
Source: Journal of Applied Physics; September 1 1998, Vol. 84 Issue 5, p2943-2948, 6p
Database: Applied Science & Technology Source
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