APA (7th ed.) Citation

Tabib-Azar, M., Hubbard, S. M., & Schnabel, C. M. (1998). Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique. Journal of Applied Physics, 84(7), 3986. https://doi.org/10.1063/1.368578

Chicago Style (17th ed.) Citation

Tabib-Azar, M., S. M. Hubbard, and C. M. Schnabel. "Mapping of Crystal Defects and the Minority Carrier Diffusion Length in 6H-SiC Using a Novel Electron Beam Induced Current Technique." Journal of Applied Physics 84, no. 7 (1998): 3986. https://doi.org/10.1063/1.368578.

MLA (9th ed.) Citation

Tabib-Azar, M., et al. "Mapping of Crystal Defects and the Minority Carrier Diffusion Length in 6H-SiC Using a Novel Electron Beam Induced Current Technique." Journal of Applied Physics, vol. 84, no. 7, 1998, p. 3986, https://doi.org/10.1063/1.368578.