Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique.
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| Title: | Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique. |
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| Authors: | Tabib-Azar, M., Hubbard, S. M., Schnabel, C. M. |
| Source: | Journal of Applied Physics; October 1 1998, Vol. 84 Issue 7, p3986-3992, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.368578 |
