Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique.

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Title: Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique.
Authors: Tabib-Azar, M., Hubbard, S. M., Schnabel, C. M.
Source: Journal of Applied Physics; October 1 1998, Vol. 84 Issue 7, p3986-3992, 7p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 500432741
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique.
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  Data: <searchLink fieldCode="AU" term="%22Tabib-Azar%2C+M%2E%22">Tabib-Azar, M.</searchLink><br /><searchLink fieldCode="AU" term="%22Hubbard%2C+S%2E+M%2E%22">Hubbard, S. M.</searchLink><br /><searchLink fieldCode="AU" term="%22Schnabel%2C+C%2E+M%2E%22">Schnabel, C. M.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; October 1 1998, Vol. 84 Issue 7, p3986-3992, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500432741
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.368578
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 3986
    Titles:
      – TitleFull: Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique.
        Type: main
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            NameFull: Tabib-Azar, M.
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            NameFull: Hubbard, S. M.
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            NameFull: Schnabel, C. M.
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            – D: 01
              M: 10
              Text: October 1 1998
              Type: published
              Y: 1998
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              Value: 84
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              Value: 7
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            – TitleFull: Journal of Applied Physics
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