Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique.
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| Title: | Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique. |
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| Authors: | Tabib-Azar, M., Hubbard, S. M., Schnabel, C. M. |
| Source: | Journal of Applied Physics; October 1 1998, Vol. 84 Issue 7, p3986-3992, 7p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 500432741 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Tabib-Azar%2C+M%2E%22">Tabib-Azar, M.</searchLink><br /><searchLink fieldCode="AU" term="%22Hubbard%2C+S%2E+M%2E%22">Hubbard, S. M.</searchLink><br /><searchLink fieldCode="AU" term="%22Schnabel%2C+C%2E+M%2E%22">Schnabel, C. M.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; October 1 1998, Vol. 84 Issue 7, p3986-3992, 7p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500432741 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/1.368578 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 3986 Titles: – TitleFull: Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Tabib-Azar, M. – PersonEntity: Name: NameFull: Hubbard, S. M. – PersonEntity: Name: NameFull: Schnabel, C. M. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 10 Text: October 1 1998 Type: published Y: 1998 Identifiers: – Type: issn-print Value: 00218979 Numbering: – Type: volume Value: 84 – Type: issue Value: 7 Titles: – TitleFull: Journal of Applied Physics Type: main |
| ResultId | 1 |