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Characterization of ultrathin ON stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride.

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Title: Characterization of ultrathin ON stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride.
Authors: Bauer, A. J., Burte, E. P., Ryssel, H.
Source: Solid-State Electronics; July 1997, Vol. 41, p1057-1065, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500468854
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Characterization of ultrathin ON stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride.
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; July 1997, Vol. 41, p1057-1065, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500468854
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1016/S0038-1101(97)00056-7
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 1057
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      – TitleFull: Characterization of ultrathin ON stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride.
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            NameFull: Bauer, A. J.
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            NameFull: Burte, E. P.
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            NameFull: Ryssel, H.
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            – D: 01
              M: 07
              Text: July 1997
              Type: published
              Y: 1997
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              Value: 00381101
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              Value: 41
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            – TitleFull: Solid-State Electronics
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