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Performance dependence of large-area silicon p-i-n photodetectors upon epitaxial thickness.

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Bibliographic Details
Title: Performance dependence of large-area silicon p-i-n photodetectors upon epitaxial thickness.
Authors: Seto, M., Mabesoone, M., De Jager, S.
Source: Solid-State Electronics; August 1997, Vol. 41, p1083-1087, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500481476
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Performance dependence of large-area silicon p-i-n photodetectors upon epitaxial thickness.
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; August 1997, Vol. 41, p1083-1087, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500481476
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      – Type: doi
        Value: 10.1016/S0038-1101(97)00057-9
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 1083
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      – TitleFull: Performance dependence of large-area silicon p-i-n photodetectors upon epitaxial thickness.
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            NameFull: Seto, M.
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            NameFull: Mabesoone, M.
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            NameFull: De Jager, S.
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            – D: 01
              M: 08
              Text: August 1997
              Type: published
              Y: 1997
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              Value: 41
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            – TitleFull: Solid-State Electronics
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