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The interface properties of MIS structures on anodically oxidized GaSb.

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Title: The interface properties of MIS structures on anodically oxidized GaSb.
Authors: Houston, G. L. B., Chen, Y., Singleton, J.
Source: Semiconductor Science & Technology; September 1997, Vol. 12, p1140-1146, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500493488
AccessLevel: 2
PubType: Academic Journal
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  Data: The interface properties of MIS structures on anodically oxidized GaSb.
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  Data: <searchLink fieldCode="AU" term="%22Houston%2C+G%2E+L%2E+B%2E%22">Houston, G. L. B.</searchLink><br /><searchLink fieldCode="AU" term="%22Chen%2C+Y%2E%22">Chen, Y.</searchLink><br /><searchLink fieldCode="AU" term="%22Singleton%2C+J%2E%22">Singleton, J.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; September 1997, Vol. 12, p1140-1146, 7p
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 1140
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      – TitleFull: The interface properties of MIS structures on anodically oxidized GaSb.
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            NameFull: Houston, G. L. B.
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            NameFull: Chen, Y.
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              Text: September 1997
              Type: published
              Y: 1997
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              Value: 12
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