Nédédlec, S., & Mathiot, D. (1997). Kinetics of arsenic segregation at grain boundaries in polycrystalline silicon. Semiconductor Science & Technology, 12, 1438.
Chicago Style (17th ed.) CitationNédédlec, Sophie, and Daniel Mathiot. "Kinetics of Arsenic Segregation at Grain Boundaries in Polycrystalline Silicon." Semiconductor Science & Technology 12 (1997): 1438.
MLA (9th ed.) CitationNédédlec, Sophie, and Daniel Mathiot. "Kinetics of Arsenic Segregation at Grain Boundaries in Polycrystalline Silicon." Semiconductor Science & Technology, vol. 12, 1997, p. 1438.
Warning: These citations may not always be 100% accurate.