APA (7th ed.) Citation

Dueñas, S., Pinacho, R., & Castán, E. (1997). Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs. Journal of Applied Physics, 82, 4338. https://doi.org/10.1063/1.366242

Chicago Style (17th ed.) Citation

Dueñas, S., R. Pinacho, and E. Castán. "Detailed Electrical Characterization of DX Centers in Se-doped AlxGa1-xAs." Journal of Applied Physics 82 (1997): 4338. https://doi.org/10.1063/1.366242.

MLA (9th ed.) Citation

Dueñas, S., et al. "Detailed Electrical Characterization of DX Centers in Se-doped AlxGa1-xAs." Journal of Applied Physics, vol. 82, 1997, p. 4338, https://doi.org/10.1063/1.366242.