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Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs.

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Bibliographic Details
Title: Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs.
Authors: Dueñas, S., Pinacho, R., Castán, E.
Source: Journal of Applied Physics; November 1 1997, Vol. 82, p4338-4345, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500522919
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs.
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  Data: <searchLink fieldCode="AU" term="%22Dueñas%2C+S%2E%22">Dueñas, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Pinacho%2C+R%2E%22">Pinacho, R.</searchLink><br /><searchLink fieldCode="AU" term="%22Castán%2C+E%2E%22">Castán, E.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; November 1 1997, Vol. 82, p4338-4345, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500522919
RecordInfo BibRecord:
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    Identifiers:
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        Value: 10.1063/1.366242
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 4338
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      – TitleFull: Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs.
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            NameFull: Dueñas, S.
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            NameFull: Pinacho, R.
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            NameFull: Castán, E.
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            – D: 01
              M: 11
              Text: November 1 1997
              Type: published
              Y: 1997
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              Value: 82
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