Lin, P., & Chen, M. (1999). The CVD growth of Cu films using H2 as carrier gas. Journal of Electronic Materials, 28(5), 567. https://doi.org/10.1007/s11664-999-0114-y
Chicago Style (17th ed.) CitationLin, Pi-Jiun, and Mao-Chieh Chen. "The CVD Growth of Cu Films Using H2 as Carrier Gas." Journal of Electronic Materials 28, no. 5 (1999): 567. https://doi.org/10.1007/s11664-999-0114-y.
MLA (9th ed.) CitationLin, Pi-Jiun, and Mao-Chieh Chen. "The CVD Growth of Cu Films Using H2 as Carrier Gas." Journal of Electronic Materials, vol. 28, no. 5, 1999, p. 567, https://doi.org/10.1007/s11664-999-0114-y.
Warning: These citations may not always be 100% accurate.