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The CVD growth of Cu films using H2 as carrier gas.

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Title: The CVD growth of Cu films using H2 as carrier gas.
Authors: Lin, Pi-Jiun, Chen, Mao-Chieh
Source: Journal of Electronic Materials; May 1999, Vol. 28 Issue 5, p567-571, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500524691
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: The CVD growth of Cu films using H2 as carrier gas.
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  Data: <searchLink fieldCode="AU" term="%22Lin%2C+Pi-Jiun%22">Lin, Pi-Jiun</searchLink><br /><searchLink fieldCode="AU" term="%22Chen%2C+Mao-Chieh%22">Chen, Mao-Chieh</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; May 1999, Vol. 28 Issue 5, p567-571, 5p
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      – Type: doi
        Value: 10.1007/s11664-999-0114-y
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 567
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      – TitleFull: The CVD growth of Cu films using H2 as carrier gas.
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            NameFull: Lin, Pi-Jiun
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            NameFull: Chen, Mao-Chieh
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              Text: May 1999
              Type: published
              Y: 1999
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