APA (7th ed.) Citation

Quintanilla, L., Pinacho, R., & Enriquez, L. (1999). Electrical characterization of a He ion implantation-induced deep level existing in p+ n InP junctions. Journal of Applied Physics, 85(11), 7978. https://doi.org/10.1063/1.369388

Chicago Style (17th ed.) Citation

Quintanilla, L., R. Pinacho, and L. Enriquez. "Electrical Characterization of a He Ion Implantation-induced Deep Level Existing in P+ N InP Junctions." Journal of Applied Physics 85, no. 11 (1999): 7978. https://doi.org/10.1063/1.369388.

MLA (9th ed.) Citation

Quintanilla, L., et al. "Electrical Characterization of a He Ion Implantation-induced Deep Level Existing in P+ N InP Junctions." Journal of Applied Physics, vol. 85, no. 11, 1999, p. 7978, https://doi.org/10.1063/1.369388.